24 May 2011

Nitronex ships 500,000th GaN RF device

Nitronex Corp of Durham, NC, USA, which was founded in 1999 and designs and makes gallium nitride on silicon (GaN-on-Si) RF power transistors for the defense, communications, cable TV, and industrial & scientific markets, has shipped more than 500,000 production devices since introducing its first production-qualified products in 2006. Volume production began in 2009, and shipments predominantly consisted of 10 different products to five customers, with a roughly even split between domestic and international sales.

“Shipping more than 500,000 devices is a testament to the early successes we’ve had in military communications, jammers, and cable TV infrastructure,” says president & CEO Charlie Shalvoy. “We provide our customers with complete RF solutions including final, driver, and pre-driver discrete and MMIC amplifiers, product models, reliability data, and applications support,” he adds. “We have also established a robust supply chain with US manufacturing partners based on our proprietary GaN-on-silicon technology... this is more scalable than competing technologies that are based on exotic substrates,” he believes. “We look forward to continued growth by expanding into emerging GaN markets such as radar and eventually commercial wireless infrastructure.”

Nitronex claims that its patented SIGANTIC GaN-on-Si process is the only production-qualified GaN process using an industry-standard silicon substrate. The firm says that this results in a robust supply chain which, combined with innovative new products, has positioned it to benefit from the significant growth expected in GaN markets in upcoming years.

See related items:

Military spending and GaN adoption driving RF power semiconductor markets

Tags: Nitronex GaN GaN RF

Visit: www.nitronex.com