15 March 2011

EPC launches lead-free and RoHS-compliant eGaN FETs

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has launched the EPC2001 and EPC2015, two lead-free, RoHS-compliant (Restriction of Hazardous Substances) enhancement-mode gallium nitride on silicon (eGaN) FETs.

The EPC2001 FET is a 100VDS device with a maximum RDS(ON) of 7 milli-Ohms with 5V applied to the gate. The EPC2015 is a 40VDS with a maximum RDS(ON) of 4 milli-Ohms. Both eGaN FETs provide significant performance advantages over similar state-of-the-art silicon-based power MOSFETs, EPC claims. Both devices have low on-resistance, are smaller than silicon devices with similar resistance, and have many times superior switching performance.

Applications that can benefit from eGaN FET performance increases include DC–DC power supplies, point-of-load converters, class D audio amplifiers, notebook and netbook computers, LED drive circuits and telecom base-stations.

“Protection of the environment is a high priority for EPC and a driving force for offering lead-free, RoHS-compliant eGaN FETs,” says co-founder & CEO Alex Lidow. “The EPC2001 and EPC2015 are the first lead-free and RoHS-compliant eGaN FETs to be introduced, and it is our plan to have all eGaN FETs available lead-free and RoHS-compliant within the next 4 months,” he adds.

Pricing (in 1000-piece quantities) is $2.80 for the EPC2001 and $2.48 for the EPC2015. Both are available through Digi-Key Corp.

An application note detailing the performance improvements of these next generation devices can be found at: http://epc-co.com

Tags: EPC GaN GaN FETs

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