- News
31 March 2011
PARC orders Aixtron CCS MOCVD system for InGaAlN lasers and LEDs
Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that in fourth-quarter 2010 it received an order for a Close Coupled Showerhead (CCS) MOCVD system (in 3x2-inch configuration) from Xerox subsidiary PARC of Palo Alto, CA, USA, which create, prototype, co-develop, license, and deliver technology and services for government and commercial clients.
The system will include the full set of advanced features such as the in-situ multichannel pyrometer ARGUS, high-temperature growth, and gap adjustment for optimum (Al)GaN conditions over a wide pressure range.
After delivery in second-quarter 2011, a local Aixtron support team will commission the new reactor within a specially dedicated facility in PARC's electronic materials and devices research division. The system will be used for the epitaxial growth of indium gallium aluminum nitride (InGaAlN) LEDs, laser diodes, and electronic devices.
“Our ongoing programs require a state-of-the-art MOCVD system with advanced features that enable our team to carry out R&D over a wide range of optoelectronic materials and devices,” says Jennifer Ernst, PARC's director of business development. “The CCS system is widely deployed in industry and well suited to our needs,” she adds.
“With it, we can expand our capacity and capabilities to develop and deliver new device technologies. We will be able to develop new processes in a commercial reactor that are compatible with a prospective scale-up to full production scale in due course,” Ernst continues. “Working closely with the experienced Aixtron support team, our group expects to, for example, quickly optimize conditions for growth of GaN alloys with a high percentage of Al, as required for deep-UV optical emitting devices.”
PARC’s R&D optoelectronic materials and devices team has already developed LEDs and laser diodes in the visible and UV spectral regions. It has made major contributions to the fundamental understanding of the materials and devices, and demonstrated innovations in the design and realization of InGaAlN devices for optoelectronic applications.
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