22 June 2011

OIPT presenting white paper and poster at ALD conference

UK-based etch, deposition and growth system maker Oxford Instruments Plasma Technology (OIPT) says that, at this year’s AVS Topical Conference on Atomic Layer Deposition (ALD 2011) in Cambridge, MA, USA (26–29 June), ALD process applications specialist Dr Qi Fang is presenting a poster ‘Conformal ALD layers grown with AAO templates and Carbon Nanotubes by remote plasma and thermal ALD’.

OIPT has also made available the white paper 'Growth of platinum films by atomic layer deposition' by principal applications engineer Fang, which details both the remote-plasma and thermal-ALD processing used in the deposition of platinum films.

Platinum films were grown on silicon wafers, SiO2, Al2O3 and high-k dielectric HfO2 ALD films on silicon substrates at 300ºC, using methylcyclopentadienyl_trimethyl platinum (MeCpPtMe3) and O2 as precursors.

The ALD Pt-films that were deposited were homogeneous and resulted in a low resistivity of 4.6µΩ-cm. Auger electron spectroscopy (AES) studies revealed high-quality Pt films deposited by both thermal and plasma ALD with carbon impurity of less than 1.5% and oxygen found only in the interface. Scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDX) were used to investigate Pt nucleation and growth in ALD processes.

OIPT says that it is remarkable that the nucleation delay was different between thermal and plasma ALD Pt,  although they have a similar growth rate of 0.45Å/cycle. In the white paper, the Pt ALD nucleation and growth behaviours with precursor dose times, O2 or O2 plasma exposures and substrates are also described.

To receive the full white paper, e-mail plasma@oxinst.com.

Tags: OIPT ALD

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