6 June 2011

NXP launches GaN for high-efficiency RF power amplifiers

At this week’s IEEE International Microwave Symposium (IMS 2011) in Baltimore, MD, USA (7–9 June), NXP Semiconductors N.V. of Eindhoven, The Netherlands, which provides mixed-signal and standard product solutions, is showcasing a live demonstration of its next-generation products based on gallium nitride (GaN) technology, manufactured on silicon carbide (SiC) substrates for enhanced RF and thermal performance. NXP says that it is now uniquely positioned as the largest semiconductor firm to offer both LDMOS (silicon) and GaN solutions. 

NXP has developed its high-frequency, high-power GaN process technology in collaboration with the Fraunhofer Institute for Applied Solid State Physics (Fraunhofer-IAF) in Freiburg, Germany and United Monolithic Semiconductors (UMS), which designs and produces RF, microwave and millimeter-wave components and ICs at its facilities in Orsay, France and Ulm, Germany.

The demonstration includes the CLF1G0530-50, a 50W wideband amplifier covering 500–3000MHz; 2.1GHz and 2.7GHz Doherty power amplifiers for base-stations; and the CLF1G2435-100, a 100W amplifier covering 2.5–3.5GHz.

Target end-user applications for NXP’s GaN include cellular communications, wideband amplifiers, ISM (industrial, scientific & medical), PMR (private mobile radio), radar, avionics, RF lighting, medical, cable television (CATV) and digital transmitters for cellular and broadcast.

In particular, with its high power densities, GaN has the potential to expand into applications such as high-power broadcast applications, where solid-state power amplifiers built with vacuum tubes are still the norm.

Also, while most base-station power amplifiers are limited to specific applications, NXP says that its new GaN process technology supports a roadmap towards a ‘universal transmitter’ that can be applied in multiple systems and frequencies, simplifying transmitter production and logistics, and allowing operators to switch between frequency bands to instantly meet demands in a base-station’s coverage area.

“As GaN continues to gain traction, the entry of major semiconductor companies such as NXP helps to validate GaN as a ‘technology of choice’ for RF power semiconductors, and will help to accelerate broader adoption,” comments Lance Wilson, director at market analyst firm ABI Research.

Engineering samples of NXP's first GaN broadband power amplifiers are available now, with volume production expected at the end of 2011.

“As we release new products based on GaN, we’ll also be working with our partners to build a European supply chain that optimizes costs at every step in the value chain, and continue to offer our customers choice when it comes to selecting the best alternatives — LDMOS or GaN — for high-efficiency applications,” says John Croteau, senior VP & general manager, high-performance RF at NXP.

Tags: NXP GaN RF power amplifiers SiC substrates

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