13 June 2011

Integra launches GaN-on-SiC HEMTs for C-band radar

Integra Technologies Inc (ITI) of El Segundo, CA, USA, which supplies high-power pulsed RF transistors for the aviation industry, has launched gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMTs) targeted at commercial C-band radar applications (including weather radar).

“GaN technology is ideally suited for high performance at frequencies above where silicon technology is competitive,” comments founder & VP Jeff Burger.

The IGN4450M50 and IGN4450M90 operate over the instantaneous bandwidth covering 4.4–5.0GHz in the lower C-band frequency range. Under 300µs pulse width and 10% duty-cycle pulsing conditions, the minimum peak output power supplied is typically 60W for the IGN4450M50 and 100W for the IGN4450M90.

The IGN5459M40 and IGN5459M80 operate over the instantaneous bandwidth covering 5.4–5.9GHz in the upper C-band frequency range. Under 300µs pulse width and 10% duty-cycle pulsing conditions, the minimum peak output power supplied is typically 40W for the IGN5459M40 and 80W for the IGN5459M80. Efficiency is 50% for both.

The devices are housed in a ceramic flanged package providing what is claimed to be excellent thermal advantages over plastic-packaged devices.

Tags: Integra GaN-on-Si HEMT C-band radar

Visit: www.integratech.com