- News
7 June 2011
Cree ships 10 million Watts of commercial RF power transistors and high-power MMIC amplifiers
Cree Inc of Durham, NC, USA says that, as of April, its RF business unit has shipped commercial gallium nitride on silicon carbide (GaN-on-SiC) RF power transistor and monolithic microwave integrated circuit (MMIC) products with combined RF output power of more than 10 million Watts, demonstrating the consistency, reliability and proven performance of its GaN high-electron-mobility transistor (HEMT) and MMIC technology. The figure includes only commercial RF products and excludes an additional 1.5 million Watts shipped for GaN MMIC foundry services.
Cree says that it attained the milestone while maintaining a return rate of less than 1 part per million and a failure-in-time rate (FIT rate) of less than 10-per-billion device hours (up to 80% lower than the typical FIT rates for other RF technologies, it is reckoned).
As the largest US producer of GaN-on-SiC RF wafer processing technology, Cree has developed a range of GaN HEMTs and MMICs designed to enable broadband, high-efficiency and reliable performance across an increasing array of RF and microwave applications.
Cree GaN RF power transistor GaN HEMT