1 July 2011

Siltronic joins imec’s GaN-on-Si research program

Silicon wafer manufacturer Siltronic AG of Munich, Germany has agreed to collaborate with nano-electronics research institute imec of Leuven, Belgium on the development of silicon wafers with a gallium nitride (GaN) layer as a partner of imec’s GaN-on-Si industrial affiliation program (IIAP). The aim is to enable the production of solid-state lighting (e.g. LEDs) and power semiconductors for the next generation on 200mm silicon wafers.

imec says that, combining superior electron mobility, high breakdown voltage and good thermal conductivity, GaN is particularly suitable for optoelectronics and advanced power semiconductors used for example in wind power turbines, solar power systems, electric vehicles and energy-saving kitchen appliances. Compared with conventional silicon-based applications, structures with GaN/(Al)GaN layers exhibit very efficient switching behavior. However, GaN technology still needs further refinement to also be economically competitive. To achieve this, inexpensive and efficient production methods for epitaxial deposition of GaN/(Al)GaN structures on larger-diameter silicon wafers are very promising, says imec.

Siltronic can draw on decades of experience in epitaxial deposition of materials on silicon substrates, while Imec is a pioneer in GaN deposition on silicon substrates with diameters of 2–6 inches. Economies of scale in the production of 200mm wafers could significantly reduce the manufacturing costs for GaN-based LEDs and power semiconductors, reckons imec.

In addition to Siltronic, other participants involved in the multi-national research platform include other substrate manufacturers, silicon compound producers, foundries and integrated device manufacturers (IDMs). Siltronic will actively use imec's facilities and technical resources. This coordinated on-site approach aims to enable inter-company collaboration between all involved partners, while providing very early access to process and equipment technology for the next generation of LEDs and power semiconductors.

“Siltronic has an enormous amount of experience in epitaxial deposition on silicon wafers that will increase the momentum of our GaN program to deliver a manufacturable GaN technology on 200mm silicon wafers,” comments Rudi Cartuyvels, VP R&D Business Lines at imec. “Siltronic is already the world market leader for silicon wafers used to manufacture discrete and integrated power devices,” claims Dr Rüdiger Schmolke, senior VP technology at Siltronic. “This research project will help us to further consolidate our leadership position in this market.”

Tags: Siltronic imec GaN-on-Si GaN/AlGaN

Visit: www.siltronic.com

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