19 July 2011

RFMD adds FD25 low-noise and FET1H switching GaAs pHEMT processes to foundry portfolio

RF Micro Devices Inc of Greensboro, NC, USA says that its Foundry Services business unit has expanded its portfolio of process technologies to include two additional gallium arsenide (GaAs) process technologies — RFMD’s FD25 low-noise pHEMT process and its FET1H switching pHEMT process (available immediately to foundry customers).

The firm says that its 0.25 micron FD25 pHEMT process technology delivers low noise, medium power and high linearity for applications including low-noise front ends and transmitter MMICs. RFMD’s 0.6 micron FET1H pHEMT process technology delivers low-noise and high-linearity switching of RF signals for applications including wireless front ends, transmit/receive modules and phased arrays.

The two new process technologies complement RFMD’s existing 0.3 micron FD30 pHEMT process technology, which was made available to foundry customers in 2010 and is optimized for applications including X-band phased-array power amplifiers and 8–16GHz wideband military EW (electronic warfare) jammers.

RFMD says that the rapid growth in the wireless communications, aerospace & defense, and radar/radar jammer markets continues worldwide, driven by end applications requiring the higher levels of integration enabled by leading semiconductor technologies. This increases the need for foundries to develop and offer technologies with flexible high-performance capabilities, it adds. The firm's low-noise FD25 and high-linearity switch FET1H technologies, along with its existing FD30 0.3 micron power process technology, offer the ability to design and manufacture devices for a wide range of application needs.

“Our FD25 0.25 micron and FET1H 0.6 micron processes further expand on our goal to provide the wireless industry a technically advanced semiconductor foundry service offering,” says Bob Van Buskirk, president of RFMD’s Multi-Market Products Group (MPG). “We are pleased to expand and grow our foundry services business beyond our current GaN and GaAs offerings to assist our customers in meeting their individual market and product needs.”

Tags: RFMD GaAs pHEMT

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