- News
1 July 2011
M/A-COM Tech launches LNAs for RF & microwave applications
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components, and subassemblies for RF, microwave and millimeter-wave applications) has launched the MAAL-01070X family of low-noise amplifiers (LNAs) for cellular infrastructure applications.
The firm claims that the GaAs-based LNAs facilitate easy implementation in multiple RF and microwave front-end circuits including GSM, CDMA, WCDMA and LTE base-stations and repeaters, meeting the performance requirements of telecom equipment makers optimizing for minimum system noise figure and increased receiver sensitivity.
“The low noise figure coupled with high gain and OIP3 make these LNAs ideal for first- and second-stage 3G and 4G receivers,” claims David Richardson, market director of M/A-COM Tech Infrastructure Products.
The MAAL-010705 and MAAL-010706 are highly linear LNAs with low noise figure (0.5dB and 0.6dB, respectively), high gain (21.0dB and 17.5dB) and excellent input return loss (19dB and 20dB) and output return loss (19dB and 16dB) designed for operation at 0.5–1.6GHz and 1.4–4.0GHz, respectively. The two amplifiers share the same pin out and are packaged in an RoHS-compliant leadless 2mm x 2mm DFN package. The bias current and gain can be set with external resistors, allowing customization of the current consumption and gain value to fit the application.
The MAAL-010704 is a versatile broadband LNA in a SOT-363 package which operates at 0.1–3.5GHz. Gain is 14.0dB, noise figure is 0.8dB, input return loss is 12dB and output return loss is 20dB. The bias current can also be set externally via the use of a resistor.
The LNAs all feature an integrated active bias circuit allowing direct connection to a 3V voltage supply while minimizing variation over temperature and process.
Production quantities and samples of the MAAL-010705 and MAAL-010706 are available from stock. The MAAL-010704 will be available for sampling and production later this summer.