12 July 2011

BeRex launches GaAs pHEMT chips for RF applications to 26GHz

BeRex Inc of San Jose, CA, USA (a subsidiary of BeRex Corp of Seoul Korea that designs and manufactures RF GaAs MIMIC and discrete transistor products for US and Canadian clients) has announced the availability of its BCP-Series of GaAs pHEMT (pseudomorphic high-electron-mobility transistor) FET chips, which are are now in production.

BCP-series devices have a nominal gate length of 0.25µm, and are available in gate widths of 200, 300, 600, 800, 1200, 1600 or 2400µm. The chips are available in bare-die form and provide low noise, high gain and high PAE (power added efficiency), suiting low-noise amplifiers, satellite communications, high-reliability and other demanding applications, says the firm. They are especially suited to either wideband (6–18GHz) or narrowband RF applications. BCP-series chips are produced using metallization and SI3N4 passivation for high reliability.

“BeRex Inc is committed to being a dominate player in providing high-performance pHEMT devices,” says Dr Alex Yoo, VP of R&D. “Our company’s Silicon Valley location has allowed us to assemble a 'dream team' of highly experienced pHEMT designers, quality and applications engineers, all of whom are focused on providing our clients with the highest-quality parts, consistently and reliably,” he adds.

Tags: GaAs pHEMT

Visit: www.berex.com