6 July 2011

Aixtron launches largest MOCVD reactor for GaN LEDs

Deposition equipment maker Aixtron SE of Herzogenrath, Germany claims to have set a new benchmark for metal-organic chemical vapor deposition (MOCVD) reactor capacity, throughput and LED production cost with the launch of the CRIUS II-L, making what is reckoned to be the world's largest-capacity MOCVD reactor now available with a capacity of 16x4-inch or 69x2-inch wafers. The new reactor evolution is based on the market-proven CRIUS II platform that was introduced in 2010, guaranteeing seamless transfer of qualified high-performance gallium nitride (GaN) LED processes, says Aixtron.

“Reduction of manufacturing cost is a key issue in the LED industry, in particular when looking at the required cost reduction for solid-state lighting products,” says Dr Rainer Beccard, VP marketing. “After having analyzed MOCVD-related manufacturing cost, it was obvious that the reactor capacity remains the key parameter with the strongest influence on operating cost,” he adds.

“This new CRIUS II-L is the largest-capacity manufacturing-proven MOCVD reactor available in the world today, allowing a fast reduction in LED chip cost,” Beccard continues. “It offers unsurpassed capacity and throughput, combined with an outstanding yield due to its excellent uniformity and reproducibility,” he claims. “The CRIUS II-L reactor is design optimized for wafer sizes of 2–8-inches and offers the potential for even further productivity enhancements.”

As with previous generations, the CRIUS II-L reactor is based on the Close Coupled Showerhead (CCS) concept which, as a key-enabling technology, has a proven track record in being easily scalable with a seamless and short process transfer, Aixtron says. The firm adds that CCS technology is established in many markets, and is known to enable straightforward process tuning, and stable and robust processes. 

See: Aixtron Company Profile

Tags: Aixtron MOCVD GaN LEDs

Visit: www.aixtron.com