10 January 2011

IR wins awards for GaN and Si power management devices

International Rectifier Corp (IR) of El Segundo, CA, USA, which makes power management devices using both silicon and gallium nitride materials, says that the editors of Electronic Design magazine have voted the first commercial integrated power-stage product using its gallium nitride (GaN)-based power device technology platform to its ‘EDN Hot 100 Products’ list.

Designed for multiphase and point-of-load (POL) applications including servers, routers, switches and general-purpose POL DC–DC converters, the iP2010 integrates an ultra-fast PowIRtune driver IC matched to a multi-switch monolithic GaN-based power device. The device is mounted in a flip-chip package platform to deliver higher efficiency and more than double the switching frequency of state-of-the-art silicon-based integrated power stage devices. Available in an LGA package with small footprint, both devices are optimized for very low power loss, feature highly efficient dual-sided cooling, and are RoHS compliant.

International Rectifier has also received the ‘Best Electronic Design’ award for 2010 in the Automotive category from Electronic Design News magazine (EDN) for two of its silicon-based power management product lines tailored for automotive as well as multiphase and point-of-load (POL) applications. The automotive-qualified AUIRF7738L2 and AUIRF7737L2 DirectFET2 MOSFETs offer overall system-level size and cost reductions along with superior performance and efficiency compared with traditional standard plastic-packaged components.

“IR continues to invest in R&D in order to introduce solutions that meet the needs of today's engineering community,” says Adam White, IR’s senior VP worldwide sales.

Tags: International Rectifier GaN power devices

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