18 January 2011

US research center orders Aixtron Hot-Wall tube reactor for graphene on SiC

Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that in third-quarter 2010 it received an order from a major corporate R&D center in northeast USA for a silicon carbide (SiC) chemical vapor deposition (CVD) system.

The order comprises a VP508GFR 1x4”-wafer configuration Hot-Wall reactor system with additional features including a Dual Tube Hot-Wall reactor with the Aixtron patented Gas Foil Rotation for individual wafer uniformity and high-temperature capability.

Following delivery in second-quarter 2011, the local Aixtron support team will perform installation and commissioning.

Proven in similar research projects, the VP508GFR system will be used to grow epitaxial SiC and convert the grown SiC material into mono-layers of graphene.

“Against the backdrop of the Nobel Prize for Physics awarded to Andre Geim and Konstantin Novoselov for graphene, this is good timing for our forthcoming delivery,” says Dr Frank Wischmeyer, VP & managing director Aixtron AB of Lund, Sweden. “Graphene is an exciting material which possesses high electron mobility, making it a potential candidate as the channel material in future high-frequency devices and integrated circuits.”

For R&D and medium-scale production, the VP508GFR Hot-Wall tube reactor offers single-wafer 4-inch and optional 6-inch capacity in a dual-chamber configuration for enhanced productivity.

Aixtron also offers production-based MOCVD platforms using its planetary type MOCVD reactors with high-temperature capability for epitaxial SiC growth for 4- and 6-inch capability.

See: Aixtron Company Profile

Tags: Aixtron SiC CVD Graphene

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