13 January 2011

China’s HC SemiTek receives six more Aixtron CRIUS MOCVD reactors

Deposition equipment maker Aixtron SE of Herzogenrath, Germany has delivered an order for six more CRIUS gallium nitride metal-organic chemical vapor deposition (MOCVD) epitaxial growth reactors in 31x2-inch wafer configuration to HC SemiTek in Wuhan, China, to be used for ultra-high-brightness (UHB) LED manufacturing.

The past year has been a boom year for MOCVD LED product development and manufacture with, in particular, many major deployments in China, says Aixtron. In addition to major companies testing the market for new business in areas such as residential lighting and mobile display applications, start-ups are making significant investments. With the rapid expansion of LED-based displays, backlighting and solid-state illumination, manufacturers are choosing solutions that support flexibility and headroom to meet the diverse demands of volume applications, says the firm.

“We now wish to extend our manufacturing capacity quickly and conveniently, as per our strategic expansion roadmap for the displays environment,” says HC SemiTek’s president Dr Rong Liu. “While this poses many challenges for providers — how to efficiently create precision epiwafers at very low cost — management through the responsive Aixtron support team will enable optimized process set-up without incurring project delay,” he believes. “The CRIUS enables significant operational flexibility and enhanced growth efficiency for state-of-the-art UHB GaN LEDs,” Liu adds.

Aixtron says that the CRIUS facilitates the ongoing evolution of the deposition of wide-bandgap compound semiconductors by extending the user’s control and accuracy while achieving the highest efficiencies demanded by the market. It also supports multiple wafers, throughput and safety with ergonomics and low running costs, the firm adds.

See: Aixtron Company Profile

Tags: Aixtron MOCVD CRIUS GaN LEDs

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