12 December 2011

TriQuint extends high-linearity 3G/4G BTS driver amplifier range to 1W and 2W

RF front-end product and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has launched two linear RF amplifier family members that lower power consumption while protecting mobile networks from disruption and service failures.

TriQuint says that patent-pending integrated protection features can guard against electro-static discharge (ESD) and DC over-voltage electrical spikes. Also, integrated RF over-drive protection reduces the chance of damage from high signal levels often seen in systems employing digital pre-distortion linearization techniques commonly utilized in 3G/4G base transceiver stations (BTS) network transceivers.

With high gain of 16.6dB and 15.8dB, output IP3 (OIP3) of 45dBm and 49.5dBm, and 29.1dBm and 32.8dBm of compressed 1dB power (P1dB) at 2.1GHz respectively, the new 400-4000MHz 1 Watt TQP7M9103 and 700-4000MHz 2 Watt TQP7M9104 high-linearity driver amplifiers suit 3G/4G wireless infrastructure applications including base transceiver stations, repeaters, boosters, remote radio heads (RRHs), defense/aerospace and other wireless systems requiring high linearity and gain with low power consumption. TriQuint says that the new devices help designers to simplify RF connectivity through reduced bills of materials, increased efficiency, and packaged design convenience.

By lowering the current draw for the 1W TQP7M9103 (to only 235mA with a 5V supply), TriQuint can offer the device in an easy-to-use, industry-standard SOT-89 package that simplifies manufacturing. The TQP7M9104 (which consumes just 427mA with a 5V supply) is packaged in an industry-standard 4mm x 4mm QFN that allows good thermal attachment to a PCB due to its large backside contact area.

Samples and evaluation boards for the TQP7M9103 and TQP7M9104, as well as the existing 0.25W TQP7M9101 and 0.5W TQP7M9102 (launched in June), are available.

Tags: TriQuint BTS driver amplifier

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