23 August 2011

EPC adds 100 milli-Ohm power transistor to 2nd-gen 200V eGaN FET range

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has introduced the EPC2012 as the newest member of its second-generation enhanced performance eGaN FET gallium nitride on silicon (eGaN) field-effect transistor (FET) family (which was launched in March with the EPC2001 and EPC2015 eGaN FETs, and added to in June with the EPC2010).

The EPC2012 FET is a 1.6mm2 200VDS device with a maximum on-resistance RDS(ON) of 100 milli-Ohms with 5V applied to the gate. The firm says that the latest EPC2012 eGaN FET provides significant performance advantages over the first-generation EPC1012 device. It has an increased pulsed current rating of 15A (up from 12A), is fully enhanced at a lower gate voltage, and has superior dv/dt immunity due to an improved ratio of QGD/QGS.

Compared with a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2012 is much smaller and has many times superior switching performance, says EPC. Applications that benefit from eGaN FET performance include high-speed DC–DC power supplies, point-of-load converters, class D audio amplifiers, hard-switched and high frequency circuits.

“This new generation of eGaN products are the industry’s first gallium nitride FETs to be offered as lead-free and RoHS-compliant,” notes co-founder & CEO Alex Lidow.

In 100-piece quantities, the EPC2012 is priced at $2.10 and is available through Digi-Key Corp.

See related items:

EPC launches 2nd-generation 200V eGaN power transistor

Tags: EPC GaN GaN FETs

Visit: http://digikey.com

Visit: www.epc-co.com