- News
5 April 2011
IQE recruits director of global GaN strategy
Epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK has appointed Dr Trevor Martin as director of global gallium nitride (GaN) strategy, responsible for enhancing and delivering IQE’s GaN strategy across the group.
IQE says that GaN is becoming an increasingly important material system across a diverse range of markets encompassing defence, industrial and consumer applications, from high-efficiency power switching and high-power radio frequency to advanced optoelectronics in the form of lasers and LEDs. Opportunities for GaN materials will be driven by technology ‘megatrends’ such as efficient power generation and transmission, efficient energy usage such as solid-state lighting, electric vehicles, and improved wireless infrastructure.
Picture: Dr Trevor Martin.
Martin has more than 25 years of experience in compound semiconductor materials and joins IQE from QinetiQ, Malvern, UK where he was responsible for its overall epitaxial capabilities and the development of GaN technology.
Martin received his PhD from the University of Glasgow for work on molecular beam epitaxy (MBE) growth on indium phosphide (InP) and has been involved in the development of a number of key semiconductor technologies prior to his work in GaN, including the on-wafer integration of optical devices and the development of antimony-based devices. He has also had extensive involvement in large multinational collaborative programs, has served on many academic steering and review panels, has co-authored more than 150 papers, and is co-inventor on a number of patents.
“IQE has established an enviable reputation as a global leader in GaN-based materials and Trevor’s appointment complements and further strengthens our technology leadership in this important market sector,” reckons business development director Adrian Meldrum. IQE acquired GaN substrate firm NanoGaN Ltd of Bath, UK in October 2009.
IQE’s final 2010 revenue up 38%, tripling profit
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