4 April 2011

CISSOID launches high-voltage 225°C SiC power switch with logic-level gate control

Fabless high-temperature semiconductor firm CISSOID of Mont-Saint-Guibert, Belgium has unveiled JUPITER, which it claims is the first high-temperature silicon carbide (SiC) high-voltage switch with seamless gate control through a simple logic-level 0/5V.

In particular, CHT-JUPITER is a 600V normally-off switch rated for a drain current of 1A at 225°C, and it is packaged in a hermetically sealed TO-254 metal package, guaranteed for operation from –55°C up to +225°C.

CHT-JUPITER’s on-resistance ranges from 0.7 Ohms at 25°C to 1.25 Ohms at 225°C. Input capacitance is typically 430pF. The gate leakage and drain off-currents are 160nA and 250µA, respectively, at 225°C.

A key feature of the device is its ability to be driven by a 0/5V logic-level signal, which dramatically reduces the complexity of the driver stage. In particular, CHT-JUPITER simplifies the design of medium-power, high-voltage converters such as switched-mode power supplies (SMPS) and motor drives that have to operate in extreme environments.

CISSOID says that, with CHT-JUPITER, electronics engineers can decrease the complexity of their electrical schematics, shorten their bill-of-material, and improve the reliability, weight and size of their systems while reducing the need for cooling in their applications.

A data-sheet is available now. CHT-JUPITER can be ordered for sampling and evaluation. Pricing starts at €481/unit up to 200 units.

Tags: SiC power switch SiC

Visit: www.cissoid.com

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