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Enabled by its proprietary, 0.25µm GaAs enhancement-mode pHEMT process, Avago Technologies has launched four new gain block solutions that feature what is said to be high linearity, high gain, excellent gain flatness and low power dissipation.
Avago’s newest power amplifier family is optimized for frequency in order to deliver better performance across major cellular frequency bands. The MGA-31189 and MGA-31389 serve applications from 50MHz to 2.0GHz and the MGA-31289 and MGA-31489 from 1.5GHz to 3.0GHz, so the MGA-31x89 series covers all major cellular bands — GSM, CDMA, and UMTS — plus next-generation LTE bands.
The family offers a choice of power levels in each pair of frequency-optimized devices: 0.25W for the MGA-31189 and MGA-31289 and 0.10W for the MGA-31389 and MGA-31489. The devices are designed with a common package footprint and pin-out, so a single PCB design supports multiple frequency bands and geographic markets with a choice of output power, simplifying PCB layout and overall design for system engineers developing new LTE band infrastructure. The devices also feature high gain, which can reduce the total number of RF stages needed.
Available in compact, industry-standard SOT-89 package, the MGA-31x89 0.25W and 0.10W gain block power amplifiers can also replace existing market solutions as a pin-to-pin, drop-in replacement, offering better linearity and power performance.
Typical features for the MGA-31189 and MGA-31389 (at 900MHz) are:
Typical features for the MGA-31289 and MGA-31489 (at 1900MHz) are:
Along with a demonstration board, the devices are available now in an RoHS-compliant, halogen-free, SOT-89 plastic package with dimensions of 4.5mm x 4.1mm x 1.5mm.
Search: Avago GaAs pHEMT
Visit: www.avagotech.com
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