News

4 November 2010

 

Jiangxi Changda adds Aixtron MOCVD reactors to boost GaN HB-LED epi capacity

Deposition equipment maker Aixtron AG of Aachen-Herzogenrath, Germany has announced an order for two AIX 2800G4 HT 2-inch metal-organic chemical vapor deposition (MOCVD) systems from Jiangxi Changda, a new customer in the southern Jiangxi province of China. The new GaN high-brightness LED (HB-LED) growth reactors have been installed and commissioned by the local Aixtron support team.

“We need them to comply with our planned capacity increase as we manufacture more LEDs to meet the strongly growing demand,” says Jiangxi Changda executive VP Dr Lu Bo. “The Aixtron systems match our specification for process flexibility, thickness uniformity, doping, and composition. We had a swift and efficient installation thanks to the Aixtron close local support and service,” he adds.

“This is an important sale for Aixtron for several reasons: Jiangxi Changda is a subsidiary of Lattice Power Corp in Nanchang, Jiangxi Province, which is one of our long-time customers and one of the first in China,” says Dr Christian Geng, VP Greater China & general manager Aixtron Taiwan. “This company relies on several Aixtron MOCVD systems to develop and manufacture HB-LEDs for full-color displays,” he adds. “Lattice Power is also scaling up its R&D for the production of HB GaN LEDs on silicon substrate for even more cost-efficient devices.”

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