News

23 March 2010

 

Fraunhofer IAF orders Aixtron MOCVD reactor for GaN-on-SiC transistors

Deposition equipment maker Aixtron AG of Aachen-Herzogenrath, Germany says that in fourth-quarter 2009 it received an order from long-time customer Fraunhofer Institute for Applied Solid State Physics (IAF) in Freiburg, Germany for an AIX 2800G4 HT MOCVD reactor.

To be supplied in 11x4”-wafer configuration, the system will be using for gallium nitride on silicon (GaN-on-SiC) for high-power, high-frequency applications to enable commercialization of GaN devices in the near future. Aixtron’s support team will install and commission the reactor in third-quarter 2010.

“We have already made a good start on the development of GaN-on-SiC transistors on our existing Aixtron reactors. However, we now need to significantly expand our capabilities,” says Dr Klaus Koehler, deputy department head of IAF's Epitaxy Group. “The new reactor will be used for the growth of AlGaN/GaN-based HEMT (high-electron-mobility transistor) structures on 4-inch semi-insulating SiC substrates,” he adds. “With this new system we will achieve the highest uniformity and crystal quality, which is necessary for the fabrication of AlGaN/GaN-based power amplifiers and MMICs [monolithic microwave integrated circuits].”

“The AIX 2800G4 HT will enable us to readily scale up to 11x4” wafers and to 6x6” at a future point,” Koehler continues. “It has all the characteristics we need such as uniformity and efficiency in a production setting, as required for GaN-on-SiC transistors for high-power, high-frequency commercial applications. In addition, it has the scope to provide us with a GaN-on-Si epiwafer capability, should the application require that,” he notes.

“The long-standing fruitful scientific cooperation with the IAF will have taken another key step when the AIX 2800G4 HT is delivered later this year,” comments Dr Frank Schulte, VP of Aixtron Europe. “The system will enable them to further optimize the performance and process technology of these devices.”

See: Aixtron Company Profile

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