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3 June 2010
Ostendo and OI-TDI offer Semi-Polar GaN wafers for LEDs and LDs
Ostendo Technologies of Carlsbad, CA, USA and Oxford Instruments’ subsidiary Technologies and Devices International Inc (TDI) of Silver Spring, MD, USA have announced the availability of semi-polar (11-22) GaN layer on sapphire substrates using Ostendo’s proprietary design and TDI’s proprietary Hydride Vapor Phase Epitaxy (HVPE) technology.
The joint development offers manufacturers of HB-LEDs and laser diodes the opportunity to significantly increase optical efficiency, compared with structures grown on c-plane GaN substrates, says Ostendo.
Search: TDI Semi-polar GaN Sapphire substrates HVPE LEDs LDs
Visit: www.ostendo.com
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