News

18 July 2010

 

SI GaAs epi to bounce back from 7% growth in 2009 to 21% in 2010

With gallium arsenide (GaAs) heterojunction bipolar transistor (HBT) and psudomorphic high-electron-mobility transistor (pHEMT) devices continuing to play a pivotal role in cellular radio terminals and a broad range of other markets, semi-insulating (SI) GaAs epitaxial substrate output is estimated to have still risen 7% year-on-year in 2009 (following 22% growth in 2008), according to the new report ‘Markets for SI GaAs Epitaxial Substrates: 2009-2014’ from market research firm Strategy Analytics. This was despite forecast in the firm’s report a year ago of flat-to-negative growth for 2009. 

In particular, the output of Taiwanese epiwafer foundry Visual Photonics Epitaxy Co Ltd (VPEC) to the merchant market grew more than 57% year-on-year, accounting for 20% of merchant supply in 2009 (after overtaking Japan’s Hitachi Cable in 2007). Meanwhile, IQE plc of Cardiff, Wales, UK maintained its status as the world's leading merchant supplier of SI GaAs epitaxial substrates.

Overall, SI GaAs epitaxial substrate volumes are forecast to bounce back to 21% growth in 2010, then grow at a CAAGR (compound annual average growth rate) of 10% through 2014 to a market value approaching $530m. By comparison, Strategy Analytics’ forecast this time last year was for a CAAGR of just 5% for 2008–2013 to $402m in 2013.

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