News

3 February 2010

 

Kyma wins $2.8m DoD funding for low-defect GaN development

Kyma Technologies Inc of Raleigh, NC, USA, which provides crystalline gallium nitride (GaN) and aluminum nitride (AlN) materials and related products and services, is to receive $2.8m from the US Department of Defense (DoD) for the continued development of low-defect-density GaN materials for high-performance electronic device applications.

This funding (included in the Fiscal Year 2010 Department of Defense Appropriations Bill) will support Kyma's ongoing efforts to make bigger and more cost-effective bulk GaN substrates, which are needed for multiple next-generation defense systems as well as several major commercial applications.

Kyma says that the funding will help to support the development of a viable domestic supply of GaN materials. Historically, the DoD has led the way in advancing semiconductor materials, creating domestic high-tech jobs and supporting the development of entire new industries, while supporting key advances in US defense capabilities. The USA led the way in developing silicon, gallium arsenide (GaAs), and indium phosphide (InP), which have enabled over $250bn in commercial device applications. However, the USA has fallen behind in producing GaN materials, which are already more important than GaAs and InP, says the firm. Japan has a major effort in GaN, while recently South Korea and China have begun aggressively pursuing GaN materials capabilities. With more than $100bn in eventual commercial device applications and a likely impact on essentially all future defense systems, there is a pressing need for the the USA to develop and maintain a strong domestic GaN manufacturing capability, Kyma asserts.

Kyma says that it is working with US Air Force Research Laboratory (AFRL) to get an associated contract in place. The firm’s Dr Heather Splawn will serve as principal investigator.

“Kyma is sincerely grateful for the support and the vision of our congressional delegation, led by Congressman David Price, for making this funding possible,” says president & CEO Dr Keith Evans. “We also thank AFRL for their continuing interest and support for domestic bulk GaN development,” he adds.

“Our primary goals include creation of new sustainable high-tech jobs, enhancement of our ability to serve our existing customers, and further penetration of our end markets,” adds Dr Edward Preble, Kyma’s chief operating officer & VP business development.

See related item:

Kyma completes custom crystal fabrication facility

Search: Kyma Substrates GaN AlN

Visit: www.kymatech.com