20 December 2010

Mitsubishi Electric launching WCDMA PAs for PC datacom terminals in cellular networks

Tokyo-based Mitsubishi Electric Corp is launching five new gallium arsenic (GaAs) power amplifiers to be used in personal computer (PC) data communication terminals for WCDMA cellular networks.

Due to the faster data transfer speeds of cellular networks, development of PC data communication terminals (such as data cards or USB terminals) has become extremely active, says Mitsubishi Electric. However, market demand for smaller terminals, requiring more power output due to greater data traffic, has created the issue of needing to limit heat accumulation as much as possible.

Incorporating GaAs bipolar field-effect transistor (BiFET), Mitsubishi Electric’s new GaAs power amplifiers (PAs) achieve a high level of integration (in a small 3mm x 3mm x 1mm mold package) and what is claimed to be an industry-leading power-added efficiency (PAE) of 45% at maximum output power of 670mW (28.25dBm), contributing to lower power consumption and heat emission in data communication terminals. The amplifiers also include a built-in coupler monitoring the output power and an attenuator that switches the power gain (Gp is 27~27.5dB, but can be set at 13–13.5dB with the built-in attenuator). The supply voltage is Vcc = 3.4V.

The series line-up covers the five major frequency bands available in North America, Europe and Asia: BA012F1 for Band 1 (1920–1980MHz); BA012F2 for Band 2 (1850–1910MHz); BA012F3 for Band 3 (1710–1785MHz); BA012F5 for Band 5 (824–849MHz); BA012F8 for Band 8 (880–915MHz). The BA012F3 is available from June and the others from March.

The PAs are fully compliant with the European Restriction of the use of certain Hazardous Substances in electrical and electronic equipment (RoHS) directive, and are completely halogen-free, based on IEC (International Electrotechnical Commission) 61249-2-21.

Tags: Mitsubishi Electric Corp GaAs BiFET WCDMA

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