9 December 2010

Mitsubishi Electric launches InGaP HBT for satellite digital radio amplifiers

Japan’s Mitsubishi Electric Corp is launching two new models of indium gallium phosphide (InGaP) heterojunction bipolar transistor (HBT) for receiver systems in satellite digital radios.

The devices have an industry-standard 4-pin full-mold package, and are best used in the second or third stages of low-noise amplifiers for L- to C-band (0.5–6GHz) applications.

Satellite digital audio radio service (SDARS), common in North America since 2001, does not require tuning to adapt to regional broadcasting like analog radio services, says Mitsubishi Electric. Car audio systems therefore use SDARS to access traffic information, entertainment programs and other information services. Low-noise amplifiers used in the reception systems of these satellite digital radios are composed of two or three stages. The first stage requires efficient low-noise and high-gain characteristics, and the second and third stages require high-gain and high-power characteristics.

On 7 February 2011, Mitsubishi Electric will begin shipping a new series of InGaP HBTs including the MGF3021AM, which features high-gain characteristics, and the MGF3022AM, which has high-power characteristics. Collector efficiency is 32% for the MGF3021AM and 44% for the MGF3022AM at P1dB. Single power supply operation suits application for the second or third stages of low-noise amplifiers.

The amplifiers operate best in combination with the MGF4921AM, Mitsubishi Electric’s low-noise gallium arsenide (GaAs) high-electron-mobility transistor (HEMT), which is already available for first-stage amplification (and which has the same footprint as the MGF3021AM and the MGF3022AM).

Tags: Mitsubishi Electric InGaP HBT Satellite digital radio amplifiers

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