News

28 April 2010

 

Cree launches Z-Rec 1700-V JBS diode series

Maker of silicon carbide (SiC) power devices, as well as LED chips, lamps and lighting fixtures, Cree Inc of Durham, NC, USA has introduced what it says are the industry’s first commercially available Z-Rec 1700-V Junction Barrier Schottky (JBS) diode products. Leveraging SiC’s ability to virtually eliminate diode switching losses, these diodes are targeted at high-voltage power-conversion applications in motor-drive, wind-energy and traction systems.

Initial products in the 1700-V series include 10-A and 25-A JBS diodes in die form, ready for integration into 1700-V power modules ranging from 50 to 600-A. The new 1700-V JBS series can increase the efficiency, reliability and longevity of power systems, while also reducing the overall system size, weight and cost, says the firm.

“The 1700-V diodes extend our leadership in energy-efficient power systems for data-center and solar-power markets to new markets such as wind-energy, train, tram and electric-vehicle power converters,” says Cengiz Balkas, Cree’s vice president and general manager, Power and RF. “Cree has the diodes of choice when high-efficiency power systems are a must. The advantages of silicon carbide are clear, and for high-voltage, high-frequency systems, you can’t afford not to use SiC.”

Francisco Canales, senior principal scientist at ABB Corporate Research, added: “SiC diodes and switches provide an important step forward in technology that allows the increase of operation frequency, reduced size and weight while providing state-of-the-art efficiency in applications such as motor drives and solar inverters. The 1700-V devices now being launched by Cree are an important step in the development of this technology.”

See related item:

Arrow to distribute Cree’s SiC-based power electronic devices

Search: Cree SiC power devices Junction Barrier Schottky diode

Visit: www.cree.com/power