News

30 September 2009

 

RFMD’s GaN HEMT demos record 30 million hours MTTF

RF Micro Devices Inc says that its high-power gallium nitride (GaN) high-electron-moobility transistor (HEMT) process technology has demonstrated what it claims is record reliability performance for operation at a bias of Vds=48V and a power density of 7.5W/mm: at a channel temperature of 200ºC, mean time to failure (MTTF) is 30 million hours. The activation energy for the process was Ea=2.3eV.

This level of reliability enables the design of highly reliable, high-performance RF power products and allows customers to design GaN-based products that meet or exceed their stringent system reliability specifications, says Bob Van Buskirk, president of RFMD’s Multi-Market Products group. The GaN technology furthers the industry’s drive for ‘green’ technology by enabling RF components and products that operate at much lower power consumption levels, he adds.

In June, RFMD completed the process qualification of its high-power GaN HEMT and announced the formation of its GaN Foundry Services business unit in order to supply its GaN technology into multiple RF power markets. RFMD says that, to date, several leading customers are preparing designs using the firm’s GaN process design kit (PDK) in anticipation of initial multi-project GaN wafer runs, scheduled for October.

RFMD has also scheduled subsequent multi-project GaN wafer runs on a monthly basis to meet what it says is the increasing customer demand.

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