News

1 September 2009

 

Raytheon’s GaN MMIC power amplifers achieve 1000 hours of reliable operation

Raytheon Company of Waltham, MA, USA says that its gallium nitride (GaN) chips have achieved 1000 hours of reliable operation, positioning the technology as the standard for next-generation radar capability, it claims.

The increased reliability and efficiency provided by GaN technology can result in lower prime power consumption and relaxed cooling requirements, says Raytheon. GaN T/R (transmit/receive) modules can hence provide much higher long-pulse radio frequency power than that of standard gallium arsenide T/R modules, the firm adds.

Raytheon engineers have now demonstrated the reliable operation of a GaN microwave monolithic integrated circuit (MMIC) power amplifier operating for more than 1000 hours with no measurable performance degradation.

“This milestone enables us to insert GaN next-generation capability into a multitude of air and missile defense programs,” says Pete Franklin, VP for National & Theater Security Programs at Raytheon Integrated Defense Systems in Tewksbury, MA. “GaN will also give the warfighter significantly more mobility, capability and reliability on the battlefield,” he adds. “Its ability to run more efficiently than other technologies will help solve many of our customers' logistical concerns.”

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