News

22 September 2009

 

Indian Institute of Science orders MOCVD reactor for nitride device research

Deposition equipment maker Aixtron AG of Herzogenrath, Germany says that the Indian Institute of Science (IISc) - currently celebrating its 100th anniversary - has ordered an AIX 200/4 RF-S R&D MOCVD reactor, for delivery in first-quarter 2010 to its new research facility for nanoenginnering in Bangalore.

“Our new AIXTRON system will be used to deposit uniform doped layers of aluminium, indium and gallium nitrides (AlN, InN, GaN) on 2- and 3-inch sapphire and silicon substrates,” says Dr Srinivasan Raghavan, assistant professor at IISc’s Materials Research Centre (MRC). “We intend to build the process technology for a range of advanced devices including white UHB [ultra-high-brightness] LEDs, solar cells and lasers among others (such as transistors),” he adds.

“In particular, our aim is to understand the fundamental relationships between stress evolution and defect formation during growth of these materials,” Raghavan continues. “We are looking forward to working closely with Aixtron and enter into a comprehensive technical cooperation program.”

The MRC was established as the Materials Research Laboratory in 1978 to pursue research and provide education in the interdisciplinary field of materials science and technology. Areas in which it is currently active include nanomaterials, electroceramics, electro-optic functional materials and compound semiconductors. The new centre for nanoengineering is an interdisciplinary unit that involves collaboration with faculty members from multiple departments.

See realted item:

CIOMP orders Aixtron systems for development of GaN-based LEDs and AlInGaP-based red diode lasers

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