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Aixtron AG of Herzogenrath, Germany says that in the first half of 2009 it delivered an AIX 2400G3 HT MOCVD system to Nanjing University's Institute of Optoelectronics (IOE) at Yangzhou. The system will be used to develop ultra-high-brightness (UHB) InGaN/GaN-based LEDs.
Established in December 2007, the IOE researches the epitaxial growth, processing and development novel optoelectronic devices.
"After a complete investigation and in consultation with local experts, the Aixtron MOCVD system was confirmed as the first choice for our GaN LED research projects. We are building new capacity and exploring leading LED science and technology," says IOE director Dr Chen Peng.
See related items:
Mitsubishi Chemical orders Aixtron MOCVD system for white HB-LED production
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