News

13 November 2009

 

AZZURRO GaN-on-Si technology transfer to Osram demonstrates production viability

Epiwafer foundry AZZURRO Semiconductors AG of Magdeburg, Germany, which provides gallium nitride on large-diameter (100mm and 150mm) silicon substrates for LED and high-voltage applications, has made public that, a year ago, it agreed to license and transfer its GaN-on-Si process technology to Germany’s Osram Opto Semiconductors for the growth of GaN-based LED structures.

Although the technology transfer is exclusive to Osram Opto Semiconductors until 7 November 2010, the licence is non-exclusive (allowing AZZURRO to continue to supply GaN-on-Si-wafers to both the LED market and the market for high-voltage applications).

Developed by AZZURRO over the last six years, the proprietary GaN-on-Si technology enables the growth of thick and crack-free GaN layers on silicon substrates with high crystal quality and minimum bow, says the firm.

“The license and transfer agreement is a big step for the commercialization of LEDs produced on silicon substrates,” says CEO Erwin Wolf. “Our technology will enable manufacturers to use silicon fabs to produce LEDs on 150mm and in future also on 200mm silicon substrates.”

Executive VP of sales & CFO Alexander Loesing adds that, although AZZURRO’s current reactor accommodates only 150mm wafers, next year the firm will have MOCVD reactors capable of deposition on 200mm wafers. The industry will ultimately transition to 200mm wafers, he believes, as — besides the inherent efficiency of using a greater proportion of the reactor area — this will allow the economies of scale of using silicon foundries.

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