News

11 June 2009

 

RFMD launches GaAs linear PAs, broadband switches and high-frequency amplifiers

RFMD launches high-efficiency linear PA for WiFi and WiMAX

At this week’s IEEE MTT-S International Microwave Symposium (IMS 2009) in Boston, MA, RF Micro Devices Inc of Greensboro, NC, USA is introducing the RF5602, a 2GHz high-power, high-efficiency and high-linearity power amplifier (PA) designed for medium-power applications including consumer premises equipment (CPE) and access point (AP) applications for WiFi and WiMAX.

“RFMD’s expanding product portfolio for WiFi and WiMAX applications provides global customers the breadth and flexibility they require to accommodate the rapidly growing demand for wireless connectivity,” says Rohan Houlden, general manager of RFMD’s Wireless Connectivity business unit. The RF5602 delivers high output power while meeting requirements for linearity and low current consumption, easing implementation of traditional power supply, transmit efficiency and thermal performance concerns, he adds.

Manufactured using RFMD’s indium gallium phosphide (InGaP) heterojunction bipolar transistor (HBT) process technology, the RF5602 is optimized for use as the final RF amplifier in 802.16 e/d and 802.11 b/g/n applications. It is also applicable for 2.4GHz ISM-band applications, PCS communications systems, and WiBro 2.3-2.4GHz applications.

As well as providing strong linearity, the RF5602 delivers error vector magnitude (EVM) of 2% at 26dBm output power (5.0V), 2% at 25dBm output power (4.2V), and 3% at 23.5dBm output power (3.3V).

Additional features include integrated input power detector on die, and 32-34dB small-signal gain.

High-isolation broadband switches added to multi-market product range

RFMD has expanded its RF component portfolio to include four new high-isolation broadband switches: the RF3021, RF3023, RF3024 and RF3025. Each of the symmetric single-pole, double-throw (SPDT) RF switches is designed to operate in multiple market segments, including cellular infrastructure, WiFi, WiMAX and antenna tuning applications for mobile devices.

RFMD’s GaAs pseudomorphic high-electron-mobility transistor (pHEMT) technology enables the operating frequency band to be wider than other high-isolation switches, it is claimed (typically 6GHz versus 3.5GHz), while maintaining low insertion loss and high isolation. Also, each switch features an on-chip driver that enables a single voltage control line.

The RF3021 and RF3025 feature very high isolation and single-bit control. The RF3025 is an absorptive switch that features a 50 ohm termination in the off-state. The RF3023 and RF3024 feature low insertion loss and moderate isolation, suiting general-purpose switching applications. The RF3021 and RF3025 are housed in a 16-pin 3mm x3mm QFN package, and the RF3023 and RF3024 in a 6-lead SC70 package.

Since RFMD’s high-isolation broadband switches come in cost-effective plastic packages, compared to metal hermetic packages or in die form, pricing is up to 50% lower than competing switches, the firm claims: $0.99 for the RF3021 and RF3025 and $0.45 for the RF3023 and RF3024 (in volumes of 10,000).

Samples of the RF3021 and RF3025 are available now, while samples of the RF3023 and RF3024 will be available in July. RFMD expects volume shipments to start in the September quarter.

*RFMD expands family of packaged broadband high-frequency amplifiers for commercial, military and space applications

RFMD has added to its SUF family of products by making available samples of three new packaged broadband GaAs pHEMT high-frequency amplifiers that deliver what is claimed to be exceptional broadband frequency performance for commercial, military and space applications.

Available in small 3mm x 3mm QFN packages, the SUF-1033, -5033, and -8533 broadband amplifiers broaden the SUF family’s performance range by offering multiple high-frequency gain blocks featuring small-signal gains of 10dB, 20dB and 15dB at the mid-band of their frequency ranges of DC-18GHz, 0.1-4GHz and DC-12GHz, respectively. Each amplifier also features a single supply voltage (of 5V), low gain variation versus temperature, and 50 ohm input/output match, promoting ease of design for global customers, it is claimed: customers across multiple markets can simplify their supply base by selecting amplifiers from a diverse portfolio.

The new family of SUF broadband amplifiers targets wideband gain blocks for military and space applications, high IP3 RF drivers, LO and IF mixer applications, and broadband test & instrumentation equipment, says Jeff Shealy, VP and general manager of RFMD’s Defense and Power business unit.

The SUF-1033, -5033 and -8533 are packaged versions of die-level amplifiers launched by RFMD in second-half 2008. Supporting both die- and package-level products allows maximum flexibility for customers focused on multi-chip integration as well as radio board development, says RFMD.

RFMD expects product revenue in the September quarter.

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