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Microsemi Corp of Irvine, CA, USA, which designs and manufactures analog mixed-signal integrated circuits and high-reliability semiconductors, has made silicon carbide (SiC) diode upgrades standard on a large selection of its existing portfolio of power modules for industrial, UPS (uninterruptible power supply), SMPS (switched-mode power supply) and motor drive applications.
While the substitution of SiC Schottky diodes for conventional fast recovery diodes (FREDs) is an option on all Microsemi power modules, the firm has selected the most frequently used offerings for standardization where high-temperature operation and temperature-independent switching behaviour are essential at elevated operating frequencies.
“By expanding our portfolio with these SiC-enhanced modules, Microsemi provides our customers with a unique variety of standard modules to best suit their design needs,” says Philippe Dupin, director of Power Module Products in Bordeaux, France. “The superior electrical characteristics of silicon carbide devices, in combination with Microsemi's innovative packaging, add to our ability to satisfy the needs of power system designers seeking to increase their power density, efficiency and system reliability with standard module solutions,” he adds.
The modules now with standard SiC upgrades range from 500V to 1200V, mainly using MOSFET technology. A smaller number of IGBT (insulated-gate bipolar transistor) modules are also included. To optimize electrical performance, the SiC diodes have been implemented in packages with the lowest parasitics, low profile and very compact SOT227, SP1, SP3, SP4 and SP6 packages.
Electrical configurations that benefit from SiC diode technology vary from single switch to phase leg, full bridge, boost, dual boost, Buck and dual-Buck choppers.
Samples are available now. Prices range from $13.78 to $246.08 in quantities of 1000-5000.
See related item:
Microsemi launches 20 new SiC-based power modules
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