News

16 January 2009

 

Cree licenses GaN substrate technology to Mitsubishi Chemical

Cree Inc of Durham, NC, USA, which makes LEDs as well as silicon carbide and gallium nitride based electronic devices, has entered into an exclusive patent license agreement (subject to some exceptions) with Japan's Mitsubishi Chemical Corp (MCC).

MCC, which develops and commercializes phosphors, gallium nitride substrates, and gallium arsenide and gallium phosphide materials for lighting and display-related products, has been given the right to manufacture and sell freestanding GaN substrates and the right to enter into similarly scoped sublicenses, subject to certain conditions. Over the life of the agreement, Cree will receive a combination of guaranteed payments and royalties on the sale of GaN substrates.

MCC is a well known and respected materials supplier that has both the resources and expertise to take full advantage of Cree’s GaN substrate technology, according to Cree’s chief operating officer Steve Kelley. “The license agreement is a further indication of Cree’s willingness to promote innovation and technological advances in optoelectronic materials, while realizing additional value from our intellectual property,” he adds.

“GaN substrates are important products in the optoelectronics business at MCC,” says Yasuji Kobashi, general manager of MCC’s optoelectronics business. “By entering into this exclusive license agreement with Cree, MCC will expand the GaN substrate business for optical and electrical devices,” he adds. “MCC will be able to accelerate R&D and production for high-quality GaN substrates with different crystalline orientations.”

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Visit: www.m-kagaku.co.jp