News

19 February 2009

 

Shin-Etsu launches ultra-thick photoresist for bump processing, GaAs and MEMS applications

Tokyo-based Shin-Etsu Chemical Co Ltd has introduced the SIPR-7126 positive-tone, chemically amplified ultra-thick photoresist, developed for thick plating applications of high-aspect-ratio features, such as those used in copper pillar bump processing in advanced packaging, as well as gallium arsenide devices.

These special applications need an ultra-thick layer of photoresist to cover the topography on the integrated circuit and to plate very high-aspect-ratio features (up to 100 microns thick). The plating chemistries are complex and varied, so the resist must also be robust to the different plating environments.

SIPR-7126 is also applicable to etch applications, such as MEMS and through-silicon vias (TSVs), where the entire thickness of silicon must be etched to build the device circuitry.

The flexible i-line photoresist can be developed by standard TMAH solutions; can be exposed by multiple exposure tools, such as steppers and aligners; and can plate up to 100 microns in a single coat with vertical profiles.

As the latest version in the 7100 series (which has been in production for several years), SIPR-7126 has been optimized to reduce processing steps and improve removability. Features include: flexibility to different plating chemistries; easy removal; easy rework; and no need for a post-exposure bake.

The new photoresist, along with the photolithography, packaging and flexible printed circuit materials of subsidiary Shin-Etsu MicroSi Inc of Phoenix, AZ, USA, will be on display at the SPIE Advanced Lithography 2009 conference and exhibition (24-25 February) in San Jose, CA, USA.

Search: Shin-Etsu Chemical Photoresist GaAs MEMS Steppers Aligners Photolithography

Visit: www.shinetsu.co.jp

Visit: www.microsi.com

Visit: http://spie.org/x10942.xml