News

16 February 2009

 

Infineon launches third-generation SiC Schottkys

At the Applied Power Electronics Conference and Exhibition (APEC) in Washington DC, power semiconductor manufacturer Infineon Technologies AG of Neubiberg, Germany has launched its third-generation thinQ! silicon carbide (SiC) Schottky diodes. Sampling started in January, with series production scheduled for early spring.

Infineon also claims that, with its third-generation, it provides the industry’s broadest SiC Schottky diode portfolio, which not only includes the TO-220 package (two-pin version) but also the DPAK package for high-power-density surface-mount designs.

Picture: Infineon’s third-generation SiC Schottky diodes, available in both DPAK and TO-220 packages.

Third-generation thinQ! SiC Schottky diodes are available in 600V (3, 4, 5, 6, 8, 9, 10, and 12A) versions in both TO-220 and DPAK packages, and in 1200V (2, 5, 8, 10, and 15A) versions in TO-220 packages.

Featuring what it claims is the industry’s lowest device capacitance for any given current rating (which enhances overall system efficiency at higher switching frequencies and under light load conditions), the new thinQ! diodes help to reduce overall power converter system costs.

The main application areas for SiC Schottky diodes are active power factor correction (CCM PFC) in switched-mode power supplies (SMPS) and other AC/DC and DC/DC power conversion applications such as solar inverters and motor drives.

Compared to Infineon’s second-generation SiC Schottky diodes, the third generation’s device capacitances are about 40% lower, reducing switching losses (e.g. improving overall efficiency by 0.4% under 20% load conditions in a 1kW PFC stage operating at 250kHz). Higher switching frequencies allow the use of smaller and lower-cost passive components (inductors and capacitors), resulting in higher-power-density designs. Reduced power losses result in benefits including reduced cooling requirements in terms of the size and number of heatsinks and fans (enabling system cost reduction and increased reliability levels). This also contributes to reduced system-level energy requirements to provide an appropriate cooling environment. Infineon expects system cost reductions in some SMPS applications of up to 20%.

Infineon was the world's first provider of SiC Schottky diodes, introducing its first products in 2001. “During the last eight years, Infineon has made a number of significant improvements to its SiC Schottky diode technology in areas such as surge current stability, switching performance and in product cost, extending the benefits of SiC technology,” says Andreas Urschitz, VP & general manager Power Semiconductor Discretes. SiC helps to drive new markets such as solar energy and high-efficiency lighting systems, he adds.

In quantities of 10,000 pieces, third-generation SiC Schottky diodes with a blocking voltage of 600V (3A) are priced at Euro 0.61 ($0.85) per unit. The 4A version is priced at Euro 0.85 ($1.19) per unit, the 8A version at Euro 1.89 ($2.65) per unit.

Search: Infineon SiC Schottky diodes SiC

Visit: www.infineon.com/sic