News

11 February 2009

 

MBE pioneer Cho to join US National Inventors Hall of Fame

The National Inventors Hall of Fame in Akron, OH, USA, which is dedicated to recognizing inventors and innovation, has announced its 2009 class of inductees, which focuses on advances related to or enabled by IC technology (in celebration of the 50th anniversary of the integrated circuit).

Picture: Alfred Y. Cho.

Included in the 15 inductees is Alfred Y. Cho who, at Bell Labs, developed molecular beam epitaxy (MBE) for the precise deposition of layers to form devices including transistors, LEDs, and lasers.

The other inductees include: Martin M. (John) Atalla, formerly of Bell Labs’ (for the MOS transistor); Intel Israel founder Dov Frohman-Bentchkowsky (EPROM); George Heilmeier, formerly of RCA Laboratories (liquid crystal displays); Texas Instruments’ Larry Hornbeck (digital micromirror device—DMD); John Macdougall and Ken Manchester of Sprague Electronics (ion implantation); Caltech’s Carver Mead (VLSI method for designing chips); Fairchild Semiconductor and Intel co-founder Gordon Moore (semiconductor production); and Frank Wanlass, formerly of Fairchild Semiconductor (complementary metal oxide semiconductor—CMOS).

Recognized posthumously are Xilinx co-founder, Ross Freeman (field-programmable gate array—FPGA); Fairchild Semiconductor co-founder Jean Hoerni (planar process); Dawon Kahng, formerly of Bell Labs (MOS transistor); Texas Instruments’ Gordon Teal (silicon transistor); and Robert Widlar (linear integrated circuits).

The 2009 class will be inducted on 2 May at the annual induction ceremony in Mountain View, CA.

See related item:

MBE pioneer Alfred Cho honoured with U.S. National Medal of Technology

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Visit: www.invent.org/2009induction