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14 December 2009

 

Low-power-consumption CMOS process used for 1.6GHz LNA for GPS

Torex Semiconductor Ltd of Tokyo, Japan claims that is first firm in the industry to develop a 1.6GHz low-noise amplifier (LNA) for GPS using a CMOS silicon process.

Many existing LNA products use either a gallium arsenide or a silicon germanium process. However, with the increasing demand for wireless devices in recent years, attention has begun to focus on CMOS silicon as a process for LNAs, says the firm.

Its XC2404A816UR-G LNA uses CMOS to achieve a frequency of 1.6GHz, a low voltage drive (1.14–1.26V at a fixed bias), low power consumption (12mW at a fixed bias), and a low noise figure (NF=0.94dB, typical). In addition, by adding one resistor for self bias, 1.8V and 2.85V power supply voltages can also be supported. In both the input and the output, 50Ohm matching is possible with few external components required. A small USP-8A01 package (1.5mm x 1.5mm x 0.6mm) helps to save space.

Torex says that it also plans to develop CMOS-based products for applications outside the GPS market.

Search: LNA GPS CMOS

Visit: www.torex.co.jp/english