News

1 December 2009

 

GaAs integration to stave off silicon challenge

The gallium arsenide industry is creating innovations designed to stave off the dual challenges of integration and low-cost silicon technologies, but HBT (heterojunction bipolar transistor) and HEMT (high-electron mobility transistor) processes will continue to underpin the commercial market for GaAs devices, which will be worth $4–5bn by 2013, according to the latest study ‘GaAs MMIC Process Technology Roadmap’ from market research firm Strategy Analytics.

BiFET (bipolar field-effect transistor) and BiHEMT (bipolar high-electron-mobility transistor) processes enable GaAs device makers to integrate HBT power amplifiers onto a single die with HEMT-based switches and other functions. Meanwhile, the use of optical lithography for the production of smaller-geometry processes will enable more cost-effective production of millimeter-wave integrated circuits.

“BiFET and BiHEMT technologies will enable the development of a future class of products, providing integrated solutions that retain the industry-leading performance offered by GaAs and necessary for next-generation wireless markets,” notes Steve Entwistle, VP of Strategy Analytics’ Strategic Technologies Practice.

“GaAs is still erroneously perceived by many as an exotic, expensive technology,” says Asif Anwar, director of the Strategy Analytics GaAs and Compound Semiconductor Technologies Service. “The reality is that GaAs technologies continue to meet the requirements from cost-sensitive markets, such as cellular handsets, and is the most cost-effective technology for markets that require millimeter-wave performance,” he adds.

“The application of optical lithography for millimeter-wave IC production will significantly enhance the cost-effectiveness of GaAs compared to silicon technology-based offerings, while retaining the benefits of performance and faster time-to-market,” Anwar concludes.

See related item:

SI GaAs epi market set for growth in 2010

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