News

4 December 2009

 

Cree acquires semi-insulating SiC and power device patents from Daimler

Cree Inc of Durham, NC, USA has acquired a portfolio of patents and patent applications related to semi-insulating silicon carbide (SiC) material and power device technology from Germany’s Daimler AG.

The portfolio consists of about 20 patent families, including patents issued in the USA, Germany, Japan, and China. Cree says that US Patent No. 5,856,231 (‘Process for Producing High-Resistance Silicon Carbide’) is an important piece of the portfolio, relating to the manufacturing of semi-insulating SiC using vanadium doping.

“We had licensed this impressive group of patents for many years, and the full acquisition is a valuable addition to our already extensive intellectual property position,” says Dr Cengiz Balkas, Cree VP & general manager, power and RF.

“Cree is already the leader in high-purity semi-insulating SiC,” claims Dr Vijay Balakrishna, Cree product line manager, materials. “Acquiring the ’231 patent further bolsters our IP position, especially in semi-insulating SiC achieved through vanadium doping.”

See related item:

SiC electronics needs transistor stimulus

Cree launches Z-Rec 600V SiC power diodes

Search: Cree SiC

Visit: www.cree.com