News

17 August 2009

 

OIPT boosts HB-LED etch system from 20 to 27 2-inch GaN wafers

UK-based etch and deposition equipment maker Oxford Instruments Plasma Technology (OIPT) says that it has developed an evolution of its System133 RIE-ICP380 reactive ion etch inductively coupled plasma tool.

Picture: System133 RIE-ICP380 reactive ion etch inductively coupled plasma tool.

The new technology is an active spacer that improves the uniformity of the plasma across the electrode, boosting etch results both within wafer and cross batch. A key benefit is that it allows an increase in batch size from 20 x 2-inch gallium nitride (GaN) wafers to 27 x 2-inch or 7 x 4-inch GaN wafers or 18 x 2-inch sapphire wafers, says the firm.

“OIPT’s new spacer offers uniformity tuning at will, which simplifies the process,” says principal applications engineer Dr Mark Dineen. “This allows enhanced process performance and higher throughput, which is essential for our production customers,” he adds. The spacer is also retrofittable to systems in the field.

OIPT’s proven System 133 process module is built on a 300mm platform, with multi-batch capability, and with processes guaranteed to ensure rapid start up during installation. The system can be clustered to combine technologies and processes, offering maximum flexibility, the firm says. With an installed base of over 2000 tools worldwide, OIPT tools have over 90% uptime, claims the firm.

See: Oxford Instruments Company Profile

Search: OIPT Etch GaN Sapphire LEDs

Visit: www.oxford-instruments.com