News

19 August 2009

 

Designs featuring Cree GaN HEMT sweep prizes in IMS power amplifier competition

Cree Inc of Durham, NC, USA says that the IEEE Microwave Theory and Techniques Society (MTT-S) International Microwave Symposium (IMS 2009) in June represented the third consecutive year that an amplifier using its CGH40010 gallium nitride (GaN) high-electron-mobility (HEMT) transistor has won the event’s best power amplifier competition. David Yu-Ting Wu, representing the University of Waterloo, received the award for best-performance amplifier designed and demonstrated as judged on efficiency, power and frequency of operation.

Wu’s Inverse Class-F amplifier was designed using Cree’s proprietary non-linear GaN HEMT model. The accuracy of the model in precisely predicting the required impedance conditions for high-efficiency operation was instrumental in achieving first-pass design success, says Cree. The winning 3.27GHz amplifier produced 7.1W of RF output power at a power added efficiency (PAE) of 71%.

The CGH40010 was also used in Inverse Class-F circuit architectures by the second- and third-place student teams: Paul Saad, Hossein Mashad Nemati and Mattias Thorsell from Chalmers University of Technology, Sweden, and Junghwan Moon and Jungjoon Kim from Pohang University of Science and Technology (POSTECH), Korea.

“This is a hat trick, of sorts, for Cree,” says Jim Milligan, Cree’s director of RF and Microwave products. “Cree congratulates the students for their efforts and wishes them continued success.”

See related items:

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Cree samples high-efficiency 120W GaN HEMT microwave transistor

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