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High Power Opto Inc (HPO) of Taichung, Taiwan ordered an Aixtron AIX 2800G4 HT MOCVD system in Q2/2008 for the volume production of ultra high brightness (UHB) GaN-based LEDs. The 42x2" wafer system will be installed in Q1/2009.
HPO chairman K.H. Huang said: “This new Aixtron equipment will be very important for our strategic company plans. We were already producing among the brightest commercially available UHB AlGaInP red LEDs on Aixtron’s AIX 2600G3 Planetary Reactor system. We now plan to be equally successful with UHB blue-green GaN LEDs. The new AIX 2800G4 HT MOCVD system will form the basis of our planned transition away from buying GaN epiwafers for in-house device fabrication. HPO’s very experienced team consisting of many of the Taiwanese LED industry’s pioneers will use the AIX 2800G4 HT to realize our own GaN MOCVD process solution. Through an HPO proprietary epiwafer technology we will boost blue LED performance to record levels.”See related items:
Semi-Photonics begins transition to 4 inch GaN with Aixtron AIX 2800G4 HT system
HPO achieves milestone for its high-power red LEDs
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