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In conjunction with its fourth annual Analyst Day in New York tomorrow, RF Micro Devices Inc of Greensboro, NC, USA says that it has broadened its portfolio of 3G front ends for the open market with the launch of two new WCDMA/HSDPA power amplifiers (PAs). The RF3267 and RF6266 highly integrated WCDMA/HSDPA PAs are designed to support the critical needs of next-generation, multi-band, multimode 3G handsets and smartphones. Based on current customer forecasts and design activity, RFMD expects volume shipments to start this quarter.
The RF3267 is a Band 1 (1920-1980MHz) WCDMA/HSDPA PA with a digitally controlled low-power mode, which allows operation up to 19dBm with reduced current consumption. An integrated coupler allows handset designers to eliminate the external coupler traditionally placed at the output of the PA. The integration of additional functionality is achieved without expanding the 3mm x 3mm x 0.9mm package size, which was first introduced with the prior-generation RF3266 PA. By maintaining pin-for-pin compatibility, the RF3267 assists handset original equipment manufacturers (OEMs) seeking to shrink handset RF sections in support of more compact and thinner devices.
The RF6266 WCDMA/HSDPA PA combines a similar feature set to the RF3267 with a compact 3mm x 3mm x 0.9mm package and the ability to operate in either Band 5 (824-849MHz) or Band 8 (880-915MHz). Used in combination, the RF3267 and RF6266 provide a compact solution for multi-band, multimode 3G handset designs targeted for the North American or European Union (EU) markets.
RFMD says that it is capturing additional 3G revenue as it introduces cellular front-end standard products to the open market and as increasingly complex 3G multimode handsets require additional content, including duplexers, filters and front-end power management. Most handset makers use standard products for their cellular front-end requirements, and RFMD expects to introduce a record number of cellular RF standard products for the open market in 2009.
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