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Showa Denko K.K. of Chichibu, Japan is extending its manufacturing capacity with a SiC multiwafer Hot-Wall Planetary Reactor system from Aixtron AG of Aachen, Germany for the production of silicon carbide epitaxial wafers.
The VP2400HW system, which will be delivered this year, has a capacity of 6x100mm SiC wafers, representing the largest SiC epitaxy production tool for highly uniform epilayers, claims Aixtron, as well as unrivalled intra- and inter-run reproducibility.
“As a result of the successful relationship between the companies, Showa Denko K.K. decided in favor of another Hot-Wall Planetary Reactor,” says Dr Frank Wischmeyer, managing director of Epigress AB of Lund, Sweden (a member of the Aixtron Group). “Due to the high throughput and exceptional yield of the system, the dedicated 100mm platform favorably meets their need for cost-competitive production of SiC epitaxial wafers,” he claims.
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Search: Showa Denko Aixtron Epigress SiC SiC epiwafer
Visit: www.aixtron.com
Visit: www.sdk.co.jp